NEW UR26K-CCD GaN MOCVD
The world’s most advanced GaN MOCVD reactor for power, high frequency, and micro-LED devices. An industry leader for over 40 years, Taiyo Nippon Sanso Corporation (TNSC) brings to market unparalleled MOCVD productivity and performance.
Taiyo Nippon Sanso Corporation (TNSC) was the first in the world to develop MOCVD equipment to produce compound semiconductors utilized in LEDs, lasers, and high performance electronics for applications such as mobile phones, advanced lighting, and optical communications systems.
FR Series Reactors for Research and Small Scale Production
Ga2O3 and related alloy processing for wafers up to 50 mm
HR Series Reactors for Research and Mass Production
GaAs, InP, and related alloy processing for wafer diameters up to 200 mm
BRC/BMC Series Reactors for Research and Mass Production
GaAs, InP, and related alloy processing for wafer diameters up to 150 mm
TNSC, which operates in Japan, along with its sister companies MATHESON (U.S.), Nippon Gases (Europe), Taiyo Nippon Sanso (India), and Leeden NOX (Singapore, Malaysia, and Indonesia) can offer complete end-to-end solutions for semiconductor and electronics manufacturers.
Arsine (AsH3), Phosphine (PH3), Silane (SiH4), and Ammonia (NH3) are the primary gases that are used in MOCVD applications.
Ultrapurification equipment for electronics can be integrated with MOCVD equipment.