Press Releases and Newsletters
- Realization of Controlled n-Type Doping of β-Ga₂O₃ Homoepitaxial Layers via a Proprietary MOVPE: Key Technology for Mass-Production of Next-Generation Power Devices
- Lund University Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Oxide Materials and Devices
- University of South Carolina Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Nitride Materials and Devices
- Notice Regarding the Sale of BRUTE®Peroxide in JAPAN, Enables Supply of Hydrogen Peroxide with Low Water Concentration
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Events and Announcements
- Taiyo Nippon Sanso is proud to sponsor the 8th International Workshop on UV Materials and Devices in Wroclaw, Poland, from September 21st-24th, 2025
- Taiyo Nippon Sanso is proud to sponsor the 67th Electronic Materials Conference (EMC) at Duke University in Durham, North Carolina, June 25th-27th, 2025
- AIST in collaboration with Taiyo Nippon Sanso will be presenting on “Development of 6-inch GaAs solar cells grown by single-chamber hydride vapor phase epitaxy,” at the 53rd IEEE Photovoltaic Specialists Conference (PVSC 53), on Wednesday, June 11th in Montreal, Canada.
- Taiyo Nippon Sanso is Proud to Sponsor the LEC 2025 Lester Eastman Conference on High Performance Devices at the University of Florida, August 11th-13th, 2025
- Taiyo Nippon Sanso will be Exhibiting at the 21st Annual PEGS Boston Essential Protein and Antibody Engineering Summit in Boston, MA May 12th-15th, 2025
