Press Releases and Newsletters
- Unipress Orders Multiple Taiyo Nippon Sanso SR4000HT MOCVD Platforms for Research and Development of Advanced Nitride Materials and Devices
- Realization of Controlled n-Type Doping of β-Ga₂O₃ Homoepitaxial Layers via a Proprietary MOVPE: Key Technology for Mass-Production of Next-Generation Power Devices
- Lund University Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Oxide Materials and Devices
- University of South Carolina Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Nitride Materials and Devices
Browse All Press Releases and Newsletters…
Events and Announcements
- Osaka Metropolitan University in Collaboration with Tokyo University of Agriculture and Technology (TUAT) and Taiyo Nippon Sanso will be presenting on “Electrical Properties of Si-doped Ga2O3 Thin Films Grown by Low-Pressure Hot-Wall MOCVD and Effects of High-Temperature Annealing,” at the 67th Electronic Materials Conference in Durham, NC, on June 26, 2025
- Lit Thinking in Collaboration with Nagoya University and Taiyo Nippon Sanso will be presenting on “Degradation of far-ultraviolet light emitting diodes on AlN substrate,” at the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden, at 2:45 PM on Tuesday, July 8th, 2025.
- Taiyo Nippon Sanso will be Presenting on “Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth,” at the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden, at 10:30 AM on Tuesday, July 8th, 2025.
- Taiyo Nippon Sanso is proud to sponsor the 8th United States Gallium Oxide Workshop (GOX 2025) in Salt Lake City, Utah, from August 4th-6th, 2025.
- Ohio State University in collaboration with Taiyo Nippon Sanso will be presenting on “Polarization-Engineered Metal Semiconductor Tunnel Junction UV LEDs,” at the 67th Electronic Materials Conference (EMC) on Friday, June 27th, 2025 in Durham, North Carolina
