Electronics
Al-Rich AlGaN Transistors with Regrown p-AlGaN Gate Layers and Ohmic Contacts
April 5, 2024
High-doping performance of sulfur and zinc dopants for tunnel diodes using hydride vapor phase epitaxy
October 24, 2023
High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy
September 28, 2023
Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy
Ion-implanted triple-zone graded junction termination extension for vertical GaN p-n diodes
UR26K-CCD – Expanding the Horizon for Gallium Nitride Mass Production MOCVD Systems
Performance of InGaN/GaN Light-emitting Diodes Grown Using NH3 with Oxygen-containing Impurities
Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy
Growth of β-Ga2O3 Layers on a 6-inch Wafer Using Halide Vapor-Phase Epitaxy
Innovative Gallium Oxide MOCVD Reactor Application Report
Global Commitment and Proven Performance
Three-Zone Junction Termination Extensions for Improved Performance of Vertical GaN PN Diodes
Fast Growth Rate MOCVD for Solar Cell Manufacturing
Biomedical
Biomedical Gas Training Videos
Metal 3D Printing
TNSC AM Advanced Room Information
White Paper: Gas Solutions for Sustainable Metal Additive Manufacturing
MATHESON-Markforged Gas Specifications for Metal 3D Printing Sintering Furnaces