Resources

Electronics

Homoepitaxial growth of thick Si-doped β-Ga₂O₃ layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy
^{_{June 1st, 2025}}

Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂fabricated using anhydrous H₂O₂ as the ALD oxidant
^{_{February 5th, 2025}}

Electrical properties of unintentionally doped β-Ga₂O₃ (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition
^{_{August 19, 2024}}

Al-Rich AlGaN Transistors with Regrown p-AlGaN Gate Layers and Ohmic Contacts
_{^{April 5, 2024}}

Growth and characterization of AlInN/GaN superlattices, Xu, et al., North Carolina State University, Journal of Crystal Growth, Volume 630, 15 March 2024, 127567
_{^{March 9, 2024}}

III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth
_{^{November 3, 2023}}

High-doping performance of sulfur and zinc dopants for tunnel diodes using hydride vapor phase epitaxy
_{^{October 24, 2023}}

High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy
_{^{September 28, 2023}}

Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy

Ion-implanted triple-zone graded junction termination extension for vertical GaN p-n diodes

Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells

1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor-Phase Epitaxy for Low-Cost GaInP/GaInAsP//Si Triple-Junction Structures

UR26K-CCD – Expanding the Horizon for Gallium Nitride Mass Production MOCVD Systems

Performance of InGaN/GaN Light-emitting Diodes Grown Using NH3 with Oxygen-containing Impurities

Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy

Growth of β-Ga₂O₃ Layers on a 6-inch Wafer Using Halide Vapor-Phase Epitaxy

Innovative Gallium Oxide MOCVD Reactor Application Report

Global Commitment and Proven Performance

TNS FR2000-OX GaO MOCVD

MOCVD Reactors at a Glance

Three-Zone Junction Termination Extensions for Improved Performance of Vertical GaN PN Diodes

Effect of high temperature homoepitaxial growth of β-Ga₂O₃ by hot-wall metalorganic vapor phase epitaxy 

TNS NeoKelvin-Turbo

TNS SR4000HT-RR MOCVD

TNS UR25K MOCVD

MOCVD for GaN Electronics

Low Cost Photovoltaic MOCVD

Fast Growth Rate MOCVD for Solar Cell Manufacturing

Biomedical

Cryo-Storage Case Study

MATHESON Biotech Solutions

Metal 3D Printing

TNSC AM Advanced Room Information

White Paper: Gas Solutions for Sustainable Metal Additive Manufacturing

MATHESON-Markforged Gas Specifications for Metal 3D Printing Sintering Furnaces

Humidity Control in Laser Powder Bed Fusion using Titanium Alloy Powder for Quality Assurance of Built Parts and Reusability of Metal Powder