Resources

Electronics

Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells

1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor-Phase Epitaxy for Low-Cost GaInP/GaInAsP//Si Triple-Junction Structures

UR26K-CCD – Expanding the Horizon for Gallium Nitride Mass Production MOCVD Systems

Performance of InGaN/GaN Light-emitting Diodes Grown Using NH3 with Oxygen-containing Impurities

Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy

Growth of β-Ga₂O₃ Layers on a 6-inch Wafer Using Halide Vapor-Phase Epitaxy

Innovative Gallium Oxide MOCVD Reactor Application Report

Global Commitment and Proven Performance

TNS FR2000-OX GaO MOCVD

MOCVD Reactors at a Glance

Three-Zone Junction Termination Extensions for Improved Performance of Vertical GaN PN Diodes

Effect of high temperature homoepitaxial growth of β-Ga₂O₃ by hot-wall metalorganic vapor phase epitaxy 

TNS MOCVD Brochure

TNS NeoKelvin-Turbo

TNS SR4000HT-RR MOCVD

TNS UR25K MOCVD

MOCVD for GaN Electronics

Low Cost Photovoltaic MOCVD

Fast Growth Rate MOCVD for Solar Cell Manufacturing

Medical

Cryo-Storage Case Study

MATHESON Biotech Solutions

Metal 3D Printing

TNSC AM Advanced Room Information

White Paper: Gas Solutions for Sustainable Metal Additive Manufacturing

MATHESON-Markforged Gas Specifications for Metal 3D Printing Sintering Furnaces

Humidity Control in Laser Powder Bed Fusion using Titanium Alloy Powder for Quality Assurance of Built Parts and Reusability of Metal Powder