Taiyo Nippon Sanso Gallium Oxide MOCVD System Installed and Qualified for Operation at Tokyo University of Agriculture and Technology
Taiyo Nippon Sanso Corporation (“TNSC”, President: Kenji Nagata) announces that it has installed its first Ga2O3 MOCVD system in the laboratory of Professor Yoshinao Kumagai at the Tokyo University of Agriculture and Technology.
1. Background
β-gallium oxide (β-Ga2O3) is attracting attention as a semiconductor material for next-generation power (and energy efficient) devices. In October 2020, TNSC and Tokyo University of Agriculture and Technology started joint research on β-Ga2O3 thin film growth by MOCVD method, and in March 2021, announced the successful MOCVD growth of β-Ga2O3. TNSC’s newly designed Ga2O3 MOCVD system will make it possible to fabricate complex device structures and further stimulate research and development of these materials.
TNSC will continue to enhance its Ga2O3 MOCVD technology to enable better energy efficient semiconductor technology to promote its company mission and to support the realization of a carbon-neutral society.
2. Outline of MOCVD system
- Process Capability: 1 × 2-inch wafer
- Model: FR2000-OX
- Features: MOCVD growth chamber for high purity and high-speed growth of oxides on β-Ga2O3 substrates to meet the needs of thick film and alloy growth for research of high performance electronic devices.
Taiyo Nippon Sanso will be exhibiting at and sponsoring the International Workshop on Nitride Semiconductors (IWN 2022) in Berlin, Germany October 9-14th, 2022
Taiyo Nippon Sanso and RIKEN demonstrate MOCVD AlGaN-based deep ultraviolet LED EL emission at 226nm
Taiyo Nippon Sanso Corporation (“TNSC”, President: Kenji Nagata) and RIKEN have demonstrated AlGaN (aluminum gallium nitride) deep ultraviolet LED electroluminescence (EL) at a short wavelength of 226 nm using TNSC’s MOCVD equipment.
AlGaN-based deep ultraviolet LEDs with emission wavelengths of 220 to 350 nm are applicable in a wide range of fields including sterilization, disinfection, and medicinal applications. TNSC and RIKEN have conducted joint research for epitaxial growth of and device efficiency improvement of the deep ultraviolet LED technology.
Previously, 280 nm emission wavelength was demonstrated with the TNSC SR4000HT MOCVD in 4-inch wafer configuration. Here we report EL emission with a short wavelength of 226 nm in with the TNSC SR4000HT in 2-inch x 3 wafers configuration.
[Fig. 1] Graph showing the EL emission spectrum at each wavelength, shortening from 286 nm, and showing that the EL emission spectrum was obtained even at 226 nm.
[Fig. 2] Graph showing the relationship between AI composition and each wavelength, indicating that the emission wavelength changes linearly with respect to Al composition.
