Press Releases and Newsletters
TNSC Develops High-Purity Hydrazine Gas Delivery System
In the electronic device manufacturing industry, hydrazine gas is favored for its superior reactivity over conventional nitriding sources, such as ammonia. This advantage facilitates the reduction of temperatures in the semiconductor manufacturing process, enhances film quality, and improves throughput. Such advancements are crucial for miniaturizing advanced logic semiconductors and increasing the storage capacity of memory chips…
Achievement of High-Speed Growth of High-Purity β-Gallium Oxide Films by Metalorganic Vapor Phase Epitaxy
This achievement is expected to lead to the practical application of mass production technology for β-Ga2O3 power devices for the realization of an energy-saving society in the future.
Production Efficiency Improved by 2X Compared to Conventional Systems: Announcement of the Release of the UR26K-CCD for Mass Production GaN MOCVD Systems
![](https://www.tnsc-innovation.com/wp-content/uploads/2023/07/TNS-UR26K-CCD-Product-Introduction1.jpg)
Notice Regarding the Sales of BRUTE®-Hydrazine, an Anhydrous Hydrazine Material
Taiyo Nippon Sanso Corporation (“TNSC”) has been supplying an anhydrous hydrazine material called BRUTE.-Hydrazine manufactured by RASIRC, Inc.*1 (“RASIRC”) to the semiconductor industry. TNSC hereby announces that we will sell this product with even lower moisture content than that of the conventional product.