Press Releases and Newsletters

Taiyo Nippon Sanso Corporation (“TNSC”) has been supplying an anhydrous hydrazine material called BRUTE.-Hydrazine manufactured by RASIRC, Inc.*1 (“RASIRC”) to the semiconductor industry. TNSC hereby announces that we will sell this product with even lower moisture content than that of the conventional product.

Taiyo Nippon Sanso Corporation (“TNSC”, President: Kenji Nagata) announces that it has installed its first Ga₂O₃ MOCVD system in the laboratory of Professor Yoshinao Kumagai at the Tokyo University of Agriculture and Technology. 

1. Background 

β-gallium oxide (β-Ga₂O₃) is attracting attention as a semiconductor material for next-generation power (and energy efficient) devices. In October 2020, TNSC and Tokyo University of Agriculture and Technology started joint research on β-Ga₂O₃ thin film growth by MOCVD method, and in March 2021, announced the successful MOCVD growth of β-Ga₂O₃. TNSC’s newly designed Ga₂O₃ MOCVD system will make it possible to fabricate complex device structures and further stimulate research and development of these materials. 

TNSC will continue to enhance its Ga2O3 MOCVD technology to enable better energy efficient semiconductor technology to promote its company mission and to support the realization of a carbon-neutral society. 

2. Outline of MOCVD system 

• Process Capability: 1 × 2-inch wafer 
• Model: FR2000-OX 
• Features: MOCVD growth chamber for high purity and high-speed growth of oxides on β-Ga2O3 substrates to meet the needs of thick film and alloy growth for research of high performance electronic devices. 

Taiyo Nippon Sanso Corporation (“TNSC”, President: Kenji Nagata) and RIKEN have demonstrated AlGaN (aluminum gallium nitride) deep ultraviolet LED electroluminescence (EL) at a short wavelength of 226 nm using TNSC’s MOCVD equipment.

AlGaN-based deep ultraviolet LEDs with emission wavelengths of 220 to 350 nm are applicable in a wide range of fields including sterilization, disinfection, and medicinal applications. TNSC and RIKEN have conducted joint research for epitaxial growth of and device efficiency improvement of the deep ultraviolet LED technology.

Previously, 280 nm emission wavelength was demonstrated with the TNSC SR4000HT MOCVD in 4-inch wafer configuration. Here we report EL emission with a short wavelength of 226 nm in with the TNSC SR4000HT in 2-inch x 3 wafers configuration.

[Fig. 1] Graph showing the EL emission spectrum at each wavelength, shortening from 286 nm, and showing that the EL emission spectrum was obtained even at 226 nm.

[Fig. 2] Graph showing the relationship between AI composition and each wavelength, indicating that the emission wavelength changes linearly with respect to Al composition.

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Taiyo Nippon Sanso and North Carolina State University Agree to Three-Year Collaboration to Enable New GaN Optoelectronic Technologies and Commercial Opportunities

Taiyo Nippon Sanso Corporation (TNSC) and North Carolina State University (NC State) announce a three-year agreement to collaborate on methods and equipment solutions to enable advanced GaN-based optoelectronic, photonic and electronic devices. NC State will use a TNSC SR2000 metal organic chemical vapor deposition (MOCVD) reactor for its research and development with support and expertise from TNSC. The goal of the three-year collaboration is to advance the stateof- the-art in GaN-based device epitaxy and device technology with a blend of complementary equipment, process, and device expertise.

“Taiyo Nippon Sanso is very proud to enter into a collaboration agreement with North Carolina State University. NC State has an excellent reputation for wide bandgap device and technology development and commercialization. Taiyo Nippon Sanso is looking forward to working with Professor Fred Kish, the NC State staff and students, and outside companies that work with the NC State Nanofabrication Facility,” said TNSC Corporate Officer Kunihiro Kobayashi.

North Carolina State University is a leading institute in wide-bandgap and ultra wide-bandgap materials and devices. The university has been at the forefront of leadership in developing and commercializing wide-bandgap technology.

“North Carolina State is proud to enter into this collaborative agreement with Taiyo Nippon Sanso,” said Fred Kish, the M.C. Dean Distinguished Professor of Electrical and Computer Engineering and director of NC State Nanofabrication Facility. “With the addition of the TNSC MOCVD system, NC State is now one of the very few research institutions with this state-of-the-art materials growth capability. The collaboration with TNSC will significantly impact advances in the realization of next generation wide-bandgap and ultra wide-bandgap materials and devices.”

As applications for GaN lasers and LEDs continue to expand, TNSC expects its SR and UR MOCVD platforms to be the platforms of choice for advanced GaN optoelectronics fabrication.

About North Carolina State University

NC State is a preeminent teaching and research enterprise that excels across disciplines and contributes more than $6.5 billion annually to North Carolina’s economy. More than 36,000 undergraduate and graduate students learn by doing — pursuing original research, starting new companies, forging connections with top employers, and serving local and global communities. NC State’s 9,000 faculty and staff are world leaders in their field, bridging the divide between academic disciplines and training high-caliber students to meet tomorrow’s challenges. Together, they forge powerful partnerships with government, industry, nonprofits and academia to remake our world for the better. For more information, visit www.ncsu.edu.

About Taiyo Nippon Sanso Corporation

Taiyo Nippon Sanso Corporation, founded in 1910 is a global supplier of industrial gases. In 1983, TNSC launched MOCVD operations alongside its conventional industrial gas operations. More information about TNSC MOCVD products and technology can be found at www.MOCVD.jp

Sandia National Laboratories Selects Second Taiyo Nippon Sanso SR4000HT MOCVD Platform for Ultra-Wide Bandgap Research and Development

Taiyo Nippon Sanso Corporation (TNSC) announces Sandia National Laboratories (Sandia) selected TNSC’s SR-4000HT metal organic chemical vapor deposition (MOCVD) system for its expansion of aluminum gallium nitride (AlGaN) and aluminum nitride (AIN) power electronics and UV optoelectronics device development.

“Taiyo Nippon Sanso is very proud to announce Sandia’s second SR-4000HT system purchase. The SR- 4000HT’s advanced and stable performance for high temperature wide bandgap materials processing met the need for Sandia’s MOCVD capabilities. Taiyo Nippon Sanso is looking forward to supporting Sandia’s advanced technology development efforts for years to come,” said TNSC Executive Corporate Officer Kunihiro Kobayashi.

TNSC expects the ultra-wide bandgap power and optoelectronics go grow substantially, and for the SR- 4000HT MOCVD system to be the platform of choice for many AlGaN and AlN applications.

About Sandia National Laboratories

For more than 70 years, Sandia has delivered essential science and technology to resolve the nation’s most challenging security issues. Sandia National Laboratories is operated and managed by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc. National Technology and Engineering Solutions of Sandia operates Sandia National Laboratories as a contractor for the U.S. Department of Energy’s National Nuclear Security Administration (NNSA) and supports numerous federal, state, and local government agencies, companies, and organizations.

About Taiyo Nippon Sanso Corporation

Taiyo Nippon Sanso Corporation, founded in 1910 is a global supplier of industrial gases. In 1983, TNSC launched MOCVD operations alongside its conventional industrial gas operations. More information about TNSC MOCVD products and technology can be found at www.MOCVD.jp