In the electronic device manufacturing industry, hydrazine gas is favored for its superior reactivity over conventional nitriding sources, such as ammonia. This advantage facilitates the reduction of temperatures in the semiconductor manufacturing process, enhances film quality, and improves throughput. Such advancements are crucial for miniaturizing advanced logic semiconductors and increasing the storage capacity of memory chips…
Press Releases and Newsletters
Achievement of High-Speed Growth of High-Purity β-Gallium Oxide Films by Metalorganic Vapor Phase Epitaxy
This achievement is expected to lead to the practical application of mass production technology for β-Ga2O3 power devices for the realization of an energy-saving society in the future.
Production Efficiency Improved by 2X Compared to Conventional Systems: Announcement of the Release of the UR26K-CCD for Mass Production GaN MOCVD Systems
Notice Regarding the Sales of BRUTE®-Hydrazine, an Anhydrous Hydrazine Material
Taiyo Nippon Sanso Corporation (“TNSC”) has been supplying an anhydrous hydrazine material called BRUTE.-Hydrazine manufactured by RASIRC, Inc.*1 (“RASIRC”) to the semiconductor industry. TNSC hereby announces that we will sell this product with even lower moisture content than that of the conventional product.
Taiyo Nippon Sanso Gallium Oxide MOCVD System Installed and Qualified for Operation at Tokyo University of Agriculture and Technology
Taiyo Nippon Sanso Corporation (“TNSC”, President: Kenji Nagata) announces that it has installed its first Ga2O3 MOCVD system in the laboratory of Professor Yoshinao Kumagai at the Tokyo University of Agriculture and Technology.
1. Background
β-gallium oxide (β-Ga2O3) is attracting attention as a semiconductor material for next-generation power (and energy efficient) devices. In October 2020, TNSC and Tokyo University of Agriculture and Technology started joint research on β-Ga2O3 thin film growth by MOCVD method, and in March 2021, announced the successful MOCVD growth of β-Ga2O3. TNSC’s newly designed Ga2O3 MOCVD system will make it possible to fabricate complex device structures and further stimulate research and development of these materials.
TNSC will continue to enhance its Ga2O3 MOCVD technology to enable better energy efficient semiconductor technology to promote its company mission and to support the realization of a carbon-neutral society.
2. Outline of MOCVD system
- Process Capability: 1 × 2-inch wafer
- Model: FR2000-OX
- Features: MOCVD growth chamber for high purity and high-speed growth of oxides on β-Ga2O3 substrates to meet the needs of thick film and alloy growth for research of high performance electronic devices.