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At ICMOVPE XXI, AIST in Collaboration with Taiyo Nippon Sanso will present on“Accelerated Raw-Material Utilization-Efficiency of GaAs Using Vertical Flow Type, Single-Chamber Hydride Vapor Phase Epitaxy,” Ryuji Oshima¹ , Guanxi Piao² , Yasushi Shoji¹ , Kikuo Makita¹, Akinori Ubukata², Shuichi Koseki² and Takeyoshi Sugaya¹ ; 

¹National Institute of Advanced Industrial Science and Technology, Japan; ²Taiyo Nippon Sanso, Japan

At ICMOVPE XXI, Taiyo Nippon Sanso will present on “Contribution to High-Quality Semiconductor Manufacturing with Face-Down MOCVD,” Keitaro Ikejiri¹, Guanxi Piao¹, Kenichi Eriguchi¹, Yoshihisa Koyama², Junya Yoshinaga¹, Kazutada Ikenaga¹, and Shuichi Koseki¹

¹Taiyo Nippon Sanso Corporation, Japan; ²Taiyo Nippon Sanso CSE Ltd., Japan

At ICMOVPE XXI, Taiyo Nippon Sanso will present on “Development of MOCVD Equipment for Nitride Semiconductors Compatible with Low Vapor Pressure Precursor Supply,” Yudai Shimizu, Guanxi Piao, Keitaro Ikejiri, Yuya Yamaoka, Sadahiro Yamada and Shuichi Koseki; Taiyo Nippon Sanso Corporation, Japan

At ICMOVPE XXI, North Carolina State University with TNSC MOCVD reactor technology will present on “Epitaxial Growth and Characterization of AlInN/GaN Superlattices,” Haotian Xue, Elia Palmese, Ben Sekely, Brian Little, Fred Kish, John Muth and Jonathan J. Wierer; North Carolina State University, United States