Events and Announcements
Tokyo University of Agriculture and Technology (TUAT) in Collaboration with Taiyo Nippon Sanso Will Present on “Investigation of electrical properties of unintentionally doped Ga2O3 thin films grown by low-pressure hot-wall MOCVD,” at the International Workshop on Gallium Oxide and Related Materials (IWGO) in Berlin, Germany, May 26-31, 2024.
Taiyo Nippon Sanso in Collaboration with Tokyo University of Agriculture and Technology (TUAT) Will Present on “Growth of Si-doped Beta-Ga2O3 Thick Layers By Low-Pressure Hot-Wall MOVPE Using Tetramethylsilane as a Doping Gas,” at the International Workshop on Gallium Oxide and Related Materials (IWGO) in Berlin, Germany, May 26-31, 2024.
At ICMOVPE XXI, AIST in Collaboration with Taiyo Nippon Sanso will present on Accelerated Raw-Material Utilization-Efficiency of GaAs Using Vertical Flow Type, Single-Chamber Hydride Vapor Phase Epitaxy, May 12th-17th
At ICMOVPE XXI, AIST in Collaboration with Taiyo Nippon Sanso will present on“Accelerated Raw-Material Utilization-Efficiency of GaAs Using Vertical Flow Type, Single-Chamber Hydride Vapor Phase Epitaxy,” Ryuji Oshima1 , Guanxi Piao2 , Yasushi Shoji1 , Kikuo Makita1, Akinori Ubukata2, Shuichi Koseki2 and Takeyoshi Sugaya1 ;
1National Institute of Advanced Industrial Science and Technology, Japan; 2Taiyo Nippon Sanso, Japan
At ICMOVPE XXI, Taiyo Nippon Sanso will present on Contribution to High-Quality Semiconductor Manufacturing with Face-Down MOCVD, May 12th-17th
At ICMOVPE XXI, Taiyo Nippon Sanso will present on “Contribution to High-Quality Semiconductor Manufacturing with Face-Down MOCVD,” Keitaro Ikejiri1, Guanxi Piao1, Kenichi Eriguchi1, Yoshihisa Koyama2, Junya Yoshinaga1, Kazutada Ikenaga1, and Shuichi Koseki1
1Taiyo Nippon Sanso Corporation, Japan; 2Taiyo Nippon Sanso CSE Ltd., Japan
