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Recent News
- Tokyo University of Agriculture and Technology (TUAT) in Collaboration with Taiyo Nippon Sanso Will Present on “Investigation of electrical properties of unintentionally doped Ga2O3 thin films grown by low-pressure hot-wall MOCVD,” at the International Workshop on Gallium Oxide and Related Materials (IWGO) in Berlin, Germany, May 26-31, 2024. May 1, 2024
- Taiyo Nippon Sanso in Collaboration with Tokyo University of Agriculture and Technology (TUAT) Will Present on “Growth of Si-doped Beta-Ga2O3 Thick Layers By Low-Pressure Hot-Wall MOVPE Using Tetramethylsilane as a Doping Gas,” at the International Workshop on Gallium Oxide and Related Materials (IWGO) in Berlin, Germany, May 26-31, 2024. May 1, 2024
- At ICMOVPE XXI, AIST in Collaboration with Taiyo Nippon Sanso will present on Accelerated Raw-Material Utilization-Efficiency of GaAs Using Vertical Flow Type, Single-Chamber Hydride Vapor Phase Epitaxy, May 12th-17th April 23, 2024
- At ICMOVPE XXI, Taiyo Nippon Sanso will present on Contribution to High-Quality Semiconductor Manufacturing with Face-Down MOCVD, May 12th-17th April 23, 2024